Ultra-high speed InGaAsP/InP DFB lasers emitting at 1. 3. mu. m wavelength

Journal Article · Mon Jun 01 00:00:00 EDT 1987 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1987.1073409· OSTI ID:6318992

Kamite, K; Sudo, H; Yano, M; Ishikawa, H; Imai, H

A bandwith of 13 GHz has been attained in a 1.3 ..mu..m DFB laser at 25/sup 0/C. A mesa structure was introduced to reduce the parasitic capacitance and the lasing wavelength was detuned from the gain peak to increase the differential gain. The bandwith is the widest so far reported in 1.3 ..mu..m DFB lasers.

• Research Organization: Fujitsu Labs., Ltd., Atsugi, Kanagawa 243-01
• OSTI ID: 6318992
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-23:6; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CAPACITANCE
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
EMISSION
ENERGY-LEVEL TRANSITIONS
FEEDBACK
FREQUENCY RANGE
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
GHZ RANGE
GHZ RANGE 01-100
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASER RADIATION
LASERS
MEDIUM TEMPERATURE
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
STIMULATED EMISSION
TUNING
WAVELENGTHS