Precise measurement of a focused ion beam profile

Journal Article · Mon Jun 01 04:00:00 EDT 1987 · J. Electrochem. Soc.; (United States)

DOI:https://doi.org/10.1149/1.2100704· OSTI ID:6317995

Shukuri, S; Wade, Y; Tamuro, M; Umemura, K; Ishitani, T

The profile of focused boron ion beam (FIB) from a liquid metal ion source was determined by MOS device characteristics and resist exposure experiments. A focused boron ion beam was line-scanned into the middle of the channel region along the source to drain direction of a MOSFET, and the effective channel width is determined from electrical measurements. PMMA resist was also exposed by a line-scanned boron FIB and the developed contour was observed by a SEM. The profile of the focused boron ion beam with a diameter of around 0.2 ..mu..m was determined by these two methods and it was found to have about a 1 ..mu..m wide tail at around three orders of magnitude below the peak current density region. The profile difference between the two measurements are attributed to the boron diffusion in silicon by subsequent heat-treatments during device fabrication.

• Research Organization: Hitachi, Ltd., Central Research Lab., Kokubunji, Tokyo 185
• OSTI ID: 6317995
• Journal Information: J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 134:6; ISSN JESOA
• Country of Publication: United States
• Language: English

Related Subjects

640301* -- Atomic
Molecular & Chemical Physics-- Beams & their Reactions
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ACCURACY
BEAM PROFILES
BEAMS
BORON
BORON IONS
CHARGED PARTICLES
CURRENT DENSITY
DIFFUSION
ELECTRON MICROSCOPY
ELEMENTS
ESTERS
FABRICATION
FIELD EFFECT TRANSISTORS
FLUIDS
FOCUSING
HEAT TREATMENTS
ION BEAMS
ION SOURCES
IONS
LIQUID METALS
LIQUIDS
MEASURING METHODS
METALS
MICROSCOPY
MOS TRANSISTORS
MOSFET
ORGANIC COMPOUNDS
ORGANIC POLYMERS
PMMA
POLYACRYLATES
POLYMERS
POLYVINYLS
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR DEVICES
SEMIMETALS
TRANSISTORS