A novel EPROM device fabricated using focused boron ion-beam implantation

Journal Article · Mon Jun 01 04:00:00 EDT 1987 · IEEE Trans. Electron Devices; (United States)

DOI:https://doi.org/10.1109/T-ED.1987.23080· OSTI ID:6224669

Shukuri, S; Wada, Y; Hagiwara, T; Komori, K; Tamura, M

A novel floating-gate avalanche injection (FAMOS) type erasable programmable read-only memory (EPROM) device is demonstrated, with a heavily focused ion-beam (FIB) implanted region of about 0.2-..mu..m width at the drain edge of the channel. This heavily B/sup +/-doped region permits a higher electric field near the drain edge, resulting in a remarkable increase of the hot-carrier generation rate, and reduces both the programming voltage and programming time. A three-dimensional device simulator, CADDETH, predicted that the electric field at the drain edge would increase by about six times, which would lead to hot-carrier generation efficiency three orders of magnitude higher.

• Research Organization: Research Lab., Hitachi, Ltd., Kokubunji, Tokyo 185
• OSTI ID: 6224669
• Journal Information: IEEE Trans. Electron Devices; (United States), Journal Name: IEEE Trans. Electron Devices; (United States) Vol. ED-34:6; ISSN IETDA
• Country of Publication: United States
• Language: English

Related Subjects

99 GENERAL AND MISCELLANEOUS
990220* -- Computers
Computerized Models
& Computer Programs-- (1987-1989)
BEAMS
BORON
C CODES
COMPUTER CODES
COMPUTERIZED SIMULATION
CRYSTAL DOPING
EFFICIENCY
ELECTRIC FIELDS
ELECTRIC POTENTIAL
ELEMENTS
ENERGY EFFICIENCY
FABRICATION
FOCUSING
ION BEAMS
ION IMPLANTATION
MEMORY DEVICES
PROGRAMMING
SEMIMETALS
SIMULATION
THREE-DIMENSIONAL CALCULATIONS