A mathematical model of the gas-phase and surface chemistry in GaAs MOCVD

Conference · Sat Dec 31 23:00:00 EST 1988

DOI:https://doi.org/10.1557/PROC-145-119· OSTI ID:6317886

Coltrin, M. E.; Kee, R. J.

This paper presents a detailed mathematical model of the coupled gas-phase chemistry, surface chemistry, and fluid mechanics in the MOCVD of GaAs from trimethylgallium and arsine in a rotating-disk reactor. The model predicts steady-state deposition rates as a function of susceptor temperature and partial pressure of the reactants. Rate constants in the model have been adjusted to match experimental deposition rates from the literature. 20 refs., 4 figs., 2 tabs.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6317886
• Report Number(s): SAND-88-3049C; CONF-890426-4; ON: DE89010228
• Country of Publication: United States
• Language: English

Related Subjects

656003* -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
99 GENERAL AND MISCELLANEOUS
990230 -- Mathematics & Mathematical Models-- (1987-1989)
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
DEPOSITION
FLUID MECHANICS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
MATHEMATICAL MODELS
MECHANICS
PNICTIDES
SURFACE COATING
SURFACES