III-V group compound semiconductor light-emitting element having a doped tantalum barrier layer

Patent · Tue May 08 04:00:00 EDT 1984

OSTI ID:6316995

Oanna, Y; Ozawa, N; Yamashita, M; Yasuda, N

Disclosed is a III-V Group compound semiconductor light-emitting element having a III-V Group compound semiconductor body with a p-n junction and including a p-type layer involved in forming the p-n junction; and a multi-layer electrode mounted on the p-type layer of the semiconductor body. The electrode comprises a first layer of gold alloy containing a small amount of beryllium or zinc and formed in direct contact with the p-type layer of the semiconductor body and an uppermost layer formed of gold or aluminum. A tantalum layer doped with carbon, nitrogen and/or oxygen is formed between the first layer and the uppermost layer by means of vacuum vapor deposition.

• Assignee: Tokyo Shibaura Denki Kabushiki Kaisha (Japan)
• Patent Number(s): US 4447825
• OSTI ID: 6316995
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
ALLOYS
ALUMINIUM
BERYLLIUM ALLOYS
ELECTRODES
ELEMENTS
FABRICATION
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
GOLD ALLOYS
GOLD BASE ALLOYS
JUNCTIONS
LAYERS
LIGHT EMITTING DIODES
MATERIALS
METALS
P-N JUNCTIONS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
TANTALUM
TRANSITION ELEMENTS
ZINC ALLOYS