Contact resistance measurements for hydrogenated amorphous silicon solar cell structures
Journal Article
·
· J. Appl. Phys.; (United States)
A technique for measuring the electrical characteristics of contacts to doped hydrogenated amorphous silicon (a-Si:H) or other high-resistivity thin-film semiconductors is developed. Experimental results for metal and conductive transparent oxide contacts to both n- and p-type a-Si:H are presented and the significance of these values to solar cell applications discussed.
- Research Organization:
- RCA Laboratories, Princeton, New Jersey 08540
- OSTI ID:
- 6313736
- Journal Information:
- J. Appl. Phys.; (United States), Vol. 59:5
- Country of Publication:
- United States
- Language:
- English
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42 ENGINEERING
ELECTRIC CONDUCTIVITY
MEASURING METHODS
ELECTRIC CONTACTS
SILICON SOLAR CELLS
EXPERIMENTAL DATA
OXIDES
SURFACE PROPERTIES
CHALCOGENIDES
DATA
DIRECT ENERGY CONVERTERS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
EQUIPMENT
INFORMATION
NUMERICAL DATA
OXYGEN COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion
420800 - Engineering- Electronic Circuits & Devices- (-1989)