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Sequential-ion-implantation synthesis of ternary metal silicides

Journal Article · · Applied Physics Letters; (United States)
DOI:https://doi.org/10.1063/1.109909· OSTI ID:6307036
 [1];  [2];  [1];  [3]
  1. Brookhaven National Laboratory, Upton, New York 11973 (United States)
  2. Spire Corporation, Bedford, Massachusetts 01730-2396 (United States)
  3. Physics Department and Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06269-3046 (United States)
By implanting two different metals in sequence into Si(100), we find that new ternary silicides can by synthesized with simple binary silicide structures. The synthesis of CoSi[sub 2]-type (Co,Fe)Si[sub 2], and CoSi-type (Co,Fe)Si and (Fe,Ni)Si is demonstrated. The structure is largely determined by the first implanted metal and the total dose of the two metals, allowing one to design the structure of the ternary silicide. The two implanted species occupy equivalent positions in the same structure and the metal composition may be continuously varied in a given structure. This opens new possibilities for the synthesis of ternary and multinary compounds and alloys.
DOE Contract Number:
AC02-76CH00016; FG02-90ER45424; AS05-80ER10742
OSTI ID:
6307036
Journal Information:
Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 63:6; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English

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