Distribution of boron atoms in ion-implanted-compound semiconductors. Technical report

Technical Report · Tue Nov 22 00:00:00 EST 1988

OSTI ID:6291482

Bowman, R C; Knudsen, J F; Downing, R G; Kremer, R E

The nondestructive neutron depth profiling (NDP) technique was used to measure the boron (10B) distributions in GaAs, CdTe, Hg0.7Cd0.3Te, and Hg0.85Mn0.15Te after multiple energy ion implants. The NDP results are found to be in good agreement with the theoretical ion ranges obtained from Monte Carlo computer simulations. Only minor changes in the boron profiles were seen for the chosen annealing conditions.

• Research Organization: Aerospace Corp., El Segundo, CA (USA). Chemistry and Physics Lab.
• OSTI ID: 6291482
• Report Number(s): AD-A-203173/0/XAB; TR-0088(3945-07)-5
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BORON
DISTRIBUTION
CADMIUM TELLURIDES
ION IMPLANTATION
GALLIUM ARSENIDES
MERCURY COMPOUNDS
ANNEALING
ATOMS
BORON IONS
COMPUTERIZED SIMULATION
DEPTH
IONS
MONTE CARLO METHOD
NEUTRONS
NONDESTRUCTIVE TESTING
PROGRESS REPORT
ARSENIC COMPOUNDS
ARSENIDES
BARYONS
CADMIUM COMPOUNDS
CHALCOGENIDES
CHARGED PARTICLES
DIMENSIONS
DOCUMENT TYPES
ELEMENTARY PARTICLES
ELEMENTS
FERMIONS
GALLIUM COMPOUNDS
HADRONS
HEAT TREATMENTS
MATERIALS TESTING
NUCLEONS
PNICTIDES
SEMIMETALS
SIMULATION
TELLURIDES
TELLURIUM COMPOUNDS
TESTING
360605* - Materials- Radiation Effects