Effects of the current distribution on the characteristics of the semiconductor laser with a channeled-substrate planar structure. Interim report

Technical Report · Fri Aug 01 00:00:00 EDT 1980

OSTI ID:6285171

Chen, C Y; Wang, S

Effects of the current distribution along the junction plane on the lateral and longitudinal mode behaviors of the semiconductor laser with a channeled-substrate planar (CSP) structure are investigated experimentally and theoretically. A new laser structure of the double-current-confinement CSP type, which has two electrodes for pumping and only one channel for stimulated emission (TEPOSE), was employed for this study. Current distribution profile of this laser can be varied by changing the relative strength of the current in each electrode. Experimental results showed that an asymmetric current profile can degrade the fundamental-lateral mode operation. A theoretical model based on phase-locked two-mode excitation was deveoped to account for the far-field pattern of a TEPOSE laser with only one electrode excited. It is also found that nonuniform excitation over the lasing mode can lead to multi-longitudinal mode, probably due to nonuniformity in the quasi-Fermi level separation. The present study demonstrates the importance of symmetric and uniform current distribution in designing semiconductor lasers.

• Research Organization: California Univ., Berkeley (USA). Electronics Research Lab.
• DOE Contract Number: F49620-79-C-0178
• OSTI ID: 6285171
• Report Number(s): AD-A-091125
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
MODE CONTROL
ALUMINIUM COMPOUNDS
CHARGE DENSITY
GALLIUM ARSENIDES
MODE LOCKING
REFRACTIVITY
SEMICONDUCTOR JUNCTIONS
ARSENIC COMPOUNDS
ARSENIDES
CONTROL
GALLIUM COMPOUNDS
JUNCTIONS
LASERS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
420300* - Engineering- Lasers- (-1989)