Minority-carrier lifetime measurements on silicon solar cells using Isc and Voc transient decay

Journal Article · Tue May 01 04:00:00 EDT 1984 · IEEE Trans. Electron Devices; (United States)

DOI:https://doi.org/10.1109/T-ED.1984.21569· OSTI ID:6284650

Rose, B H

Measurements of the transient decay of short-circuit current and open-circuit voltage of solar cells provide sufficient information, in principle, to determine both the effective back-surface recombination velocity S and the base minority-carrier lifetime /tau/. The practical use of the method is illustrated by an example, and the technique is applied to a variety of cells. Analysis of the effect of different cell thickness on the measurement is included. Finally, some limitations, both fundamental and experimental, are discussed.

• Research Organization: Sandia National Laboratories, Albuquerque, NM
• OSTI ID: 6284650
• Journal Information: IEEE Trans. Electron Devices; (United States), Journal Name: IEEE Trans. Electron Devices; (United States) Vol. ED-31:5; ISSN IETDA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CARRIER LIFETIME
CHARGE CARRIERS
CURRENTS
DIRECT ENERGY CONVERTERS
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
EQUIPMENT
LIFETIME
MEASURING METHODS
PHOTOCONDUCTIVITY
PHOTOCURRENTS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
RECOMBINATION
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
TRANSIENTS