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Lifetime and effective surface recombination velocity measurements in high-efficiency Si solar cells

Conference ·
OSTI ID:5912431
A conventional analysis method, based on minority carrier diffusion in a solar cell base, is used to obtain bulk lifetime (tau) and effective back-surface recombination velocity (S) from measurements of asymptotic decay times of short-circuit current and open circuit voltage. Since the decay times depend individually on both S and tau, it is necessary to use both current and voltage data for unique results. Experimental measurements of current and voltage transients are presented from variable base resistivity cells, ..gamma..-irradiated cells and cells with intentionally damaged back surface field regions. These cells exhibit lifetimes from one to several hundred ..mu..sec and recombination velocities from 100 to 5000 cm/sec. All features of the data are accounted for by the analysis.
Research Organization:
Sandia National Labs., Albuquerque, NM (USA)
DOE Contract Number:
AC04-76DP00789
OSTI ID:
5912431
Report Number(s):
SAND-81-2090C; CONF-811207-1; ON: DE81030361
Country of Publication:
United States
Language:
English