Metal-sensing layer-semiconductor and metal-sensing layer-metal heterostructure gas sensors

Conference · Thu Jan 01 00:00:00 EST 1987

OSTI ID:6284586

O'Leary, M; Li, Zheng; Fonash, S J

Extremely sensitive gas sensors can be fabricated using heterostructures of the form metal-sensing layer-semiconductor or metal-sensing layer-metal. These structures are heterostructure diodes which have the barrier controlling transport at least partially located in the sensing layer. In the presence of the gas species to be detected, the electrical properties of the sensing layer evolve, resulting in a modification of the barrier to electric current transport and, hence, resulting in detection due to changes in the current-voltage characteristics of the device. This type of sensor structure is demonstrated using the Pd/Ti-O/sub x/Ti heterostructure hydrogen detector.

• Research Organization: Pennsylvania State Univ., University Park (USA)
• DOE Contract Number: AC02-76CH00016
• OSTI ID: 6284586
• Report Number(s): BNL-39910; CONF-871027-29; ON: DE87011293
• Resource Relation: Conference: 172. meeting of the Electrochemical Society, Honolulu, HI, USA, 18 Oct 1987; Other Information: Portions of this document are illegible in microfiche products
• Country of Publication: United States
• Language: English

Related Subjects

47 OTHER INSTRUMENTATION
GAS ANALYSIS
JUNCTION DIODES
HETEROJUNCTIONS
USES
EXPERIMENTAL DATA
FABRICATION
HYDROGEN
PALLADIUM
PERFORMANCE TESTING
SENSITIVITY
SILICON
TITANIUM
DATA
ELEMENTS
INFORMATION
JUNCTIONS
METALS
NONMETALS
NUMERICAL DATA
PLATINUM METALS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
TESTING
TRANSITION ELEMENTS
440300* - Miscellaneous Instruments- (-1989)