The 15R {yields} 3 stress-induced transformation in SiC
Conference
·
OSTI ID:62831
- Case Western Reserve Univ., Cleveland, OH (United States)
A recently developed dislocation model for polytypic transformation in SiC is briefly described. Some experiments carried out on the basis of this model are then presented. The experiments consist of indenting single crystals of the 15R {alpha}-SiC polytype in the temperature range 1100-1300{degrees}C in vacuum with a load of 300 g. The plastic zone around the incidents have then been investigated by transmission electron microscopy (TEM). Within the plastic zone of the indents, bands of cubic {beta}-SiC (3C) are found indicating that a {alpha}{yields}{beta} polytypic transformation has taken place. This stress-induced transition is consistent with the proposed dislocation model for polytypic transformation.
- DOE Contract Number:
- FG02-93ER45496
- OSTI ID:
- 62831
- Report Number(s):
- CONF-940315--
- Country of Publication:
- United States
- Language:
- English
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