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Photoconductivity enhancement by light trapping in rough amorphous silicon

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.94035· OSTI ID:6282625
The photoconductivity of amorphous silicon films is shown to be enhanced by a factor of 25 at long wavelengths when the material is deposited on a rough, reflecting substrate. In a solar cell, this light trapping effect would produce a 4.5-mA/cm/sup 2/ increase in the short circuit current.
Research Organization:
Corporate Research Laboratories, Exxon Research and Engineering Company, Linden, New Jersey 07036
OSTI ID:
6282625
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 42:8; ISSN APPLA
Country of Publication:
United States
Language:
English