Phase-locked operation of a three-element InGaAsP/InP grating-surface-emitting diode laser array

Journal Article · Mon Apr 03 04:00:00 EDT 1989 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100698· OSTI ID:6278701

Palfrey, S L; Hammer, J M; Longeway, P A; Carlson, N W; Evans, G A; Andrews, J T; Jaklik, J; Kirk, J B; Stolzenberger, R; Triano, A R; others, and

Phased-locked operation of a three-element linear grating-surface-emitting laser diode array in the InGaAsP/InP material system is demonstrated. Far-field patterns and spectra indicate coherence across the length of the array and dynamic wavelength stability due to grating feedback.

• Research Organization: David Sarnoff Research Center, CN 5300, Princeton, New Jersey 08543-5300
• OSTI ID: 6278701
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 54:14; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
DATA
EXPERIMENTAL DATA
FEEDBACK
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
GRATINGS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
LASERS
NUMERICAL DATA
OPERATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
STABILITY