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U.S. Department of Energy
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Development of infrared detectors based on Type II, InAsSb strained-layer superlattices

Conference ·
OSTI ID:6277556

An overview is provided of long wavelength, photovoltaic detectors constructed with Type II (also known as staggered''), III-V superlattices. Specifically, the electronic properties of InAsSb strained-layer superlattices and prototype detectors utilizing these structures are described. 12 refs., 5 figs.

Research Organization:
Sandia National Labs., Albuquerque, NM (USA)
Sponsoring Organization:
DOE/DP
DOE Contract Number:
AC04-76DP00789
OSTI ID:
6277556
Report Number(s):
SAND-90-1698C; CONF-901105--28; ON: DE91004727
Country of Publication:
United States
Language:
English