Near-band-edge photoluminescence emission in Al{sub x}Ga{sub 1{minus}x}N under high pressure

Journal Article · Fri May 01 00:00:00 EDT 1998 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.121277· OSTI ID:627729

Shan, W; Ager, III, J W; Walukiewicz, W ^[1]; Haller, E E ^[2]; Little, B D; Song, J J ^[3]; Schurman, M; Feng, Z C; Stall, R A ^[4]; Goldenberg, B ^[5]

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1. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California94720 (United States)
2. Materials Sciences Division, Lawrence Berkeley National Laboratory and Department of Materials Sciences and Mineral Engineering, University of California, Berkeley, California94720 (United States)
3. Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma74078 (United States)
4. EMCORE Corporation, Somerset, New Jersey08873 (United States)
5. Honeywell Technology Center, Plymouth, Minnesota55420 (United States)

We present results of pressure-dependent photoluminescence (PL) studies of single-crystal Al{sub x}Ga{sub 1{minus}x}N epitaxial films grown on sapphire substrates by metalorganic chemical vapor deposition. PL measurements were performed under hydrostatic pressure using the diamond-anvil-cell technique. PL spectra taken from the Al{sub x}Ga{sub 1{minus}x}N epitaxial films are dominated by strong near-band-edge luminescence emissions. The emission lines were found to shift linearly towards higher energy with increasing pressure. By examining the pressure dependence of the spectral features, the pressure coefficients for the PL emissions associated with the direct {Gamma} band gap of Al{sub x}Ga{sub 1{minus}x}N were determined. Our results yield a pressure coefficient of 4.0{times}10{sup {minus}3}eV/kbar for Al{sub 0.05}Ga{sub 0.95}N and 3.6{times}10{sup {minus}3}eV/kbar for Al{sub 0.35}Ga{sub 0.65}N. {copyright} {ital 1998 American Institute of Physics.}

• OSTI ID: 627729
• Journal Information: Applied Physics Letters, Vol. 72, Issue 18; Other Information: PBD: May 1998
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM COMPOUNDS
GALLIUM COMPOUNDS
ENERGY GAP
GALLIUM NITRIDES
ALUMINIUM NITRIDES
PRESSURE DEPENDENCE
PHOTOLUMINESCENCE
THIN FILMS
CHEMICAL VAPOR DEPOSITION
VERY HIGH PRESSURE
CHEMICAL COMPOSITION