A new GaInAsSb-based photovoltaic cell for use with sources at {le}1073K in thermophotovoltaic power conversion systems
- Edtek, Inc. 7082 S. 220th. Kent, Washington98032 (United States)
- LPD/DFA Instituto de Fisica Gleb Wataghin-Unicamp C.P. 6165Campinas S.P. (Brazil)
- National Renewable Energy Laboratory SERF E200-06 15523 Denver West Parkway Golden, Colorado80401-3393 (United States)
Characteristics of photovoltaic cells fabricated from diffused homojunctions in quaternary GaInAsSb are reported for the first time. The unique feature of these quaternary cells is the extended long-wavelength response to 2.2 microns, enabling the efficient use of blackbody-like thermal sources operating as low as 1073 K in thermophotovoltaic energy conversion systems. Cells were based on a simple structure, and cell fabrication employed low-cost, high-yield, mature microelectronics processes. Specifically, Ga{sub .88}In{sub .12}As{sub .11}Sb{sub .89} was grown by liquid-phase-epitaxy lattice matched to n-type GaSb substrates. The junction was formed by zinc doping in a quasi-closed-box diffusion furnace. Silicon nitride served as the anti-reflection coating, and electron-beam deposited metal contacts provided low resistance. Other salient features of these cells include an internal quantum efficiency exceeding 75{percent} at 299 K, and V{sub OC}=0.26V, a fill factor of 0.55, and an I{sub SC} of 1.2A/cm{sup 2}, all at 288 K, excellent for a quaternary material whose optical characterization showed a bandgap of 0.58 eV. Process improvement can increase this fill factor to 0.75, as has been previously demonstrated with binary GaSb cells fabricated with similar processes. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 627674
- Report Number(s):
- CONF-970115-; ISSN 0094-243X; TRN: 98:006045
- Journal Information:
- AIP Conference Proceedings, Vol. 387, Issue 1; Conference: Space technology and applications international forum (STAIF - 97), Albuquerque, NM (United States), 26-30 Jan 1997; Other Information: PBD: Jan 1997
- Country of Publication:
- United States
- Language:
- English
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