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Title: MBE growth of GaInAsSb p/n junction diodes for thermophotovoltaic applications

Abstract

This paper reports recent progress in the development of quaternary III-V thermophotovoltaic (TPV) devices based on MBE grown Ga{sub x}In{sub 1{minus}x}As{sub y}Sb{sub 1{minus}y}. TPV is of great interest for a variety of applications. The objective of this work is to develop a TPV cell which is tunable to the emission spectrum of a heated blackbody, at temperatures in the range of 1200--1473 K. One aspect of this tuning is to match the band gap, E{sub gap}, of the photovoltaic device to the peak output of the heat source., An advantage of the quarternary III-V semiconductor systems is that devices can be fabricated by molecular beam epitaxy on a suitable binary substrate, such as GaSb or InAs, and the band gap and lattice constant can be adjusted more or less independently, to match requirements. Quarternary cells, with band-gaps in the 0.5 to 0.72 eV range, have been fabricated and tested. For 0.54 eV devices the authors obtained V{sub oc} = 0.3 V and I{sub sc} = 1.5 amperes/cm{sup 2} under infrared illumination of a 1200 K blackbody. Under high illumination levels the V{sub oc} and I{sub sc} ranged from 0.5 V at 3 amperes/cm{sup 2} for 0.72 eV devices to 0.31more » V at 1.2 amperes/cm{sup 2} for 0.5 eV devices, indicating good photovoltaic device characteristics over the range of bandgaps. The diode ideality factor for 0.54 eV devices ranged from 2.45 at low illumination indicating tunneling-dominated dark current, to 1.7 at high illumination intensity indicating recombination-generation dominated dark currents.« less

Authors:
 [1]; ; ;  [2];  [3];  [4];  [5]
  1. Lockheed Martin Labs., Baltimore, MD (United States)
  2. Lockheed Martin, Schenectady, NY (United States)
  3. Lockheed Martin Astro Space, Philadelphia, PA (United States)
  4. ARL, Adelphi, MD (United States)
  5. National Semiconductor, Annapolis Junction, MD (United States)
Publication Date:
Research Org.:
Knolls Atomic Power Lab., Schenectady, NY (United States)
Sponsoring Org.:
USDOE Assistant Secretary for Nuclear Energy, Washington, DC (United States)
OSTI Identifier:
350923
Report Number(s):
KAPL-P-000228; K-96108; CONF-960834-
ON: DE99002667; TRN: AHC29921%%108
DOE Contract Number:  
AC12-76SN00052
Resource Type:
Conference
Resource Relation:
Conference: 9. international conference on molecular beam epitaxy, Malibu, CA (United States), 5-9 Aug 1996; Other Information: PBD: Aug 1996
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 30 DIRECT ENERGY CONVERSION; THERMOPHOTOVOLTAIC CONVERTERS; SEMICONDUCTOR DIODES; GALLIUM ARSENIDES; INDIUM ARSENIDES; GALLIUM ANTIMONIDES; INDIUM ANTIMONIDES; ENERGY GAP; HEAT SOURCES; MOLECULAR BEAM EPITAXY; LATTICE PARAMETERS; P-N JUNCTIONS

Citation Formats

Uppal, P N, Charache, G, Baldasaro, P, Campbell, B, Loughin, S, Svensson, S, and Gill, D. MBE growth of GaInAsSb p/n junction diodes for thermophotovoltaic applications. United States: N. p., 1996. Web.
Uppal, P N, Charache, G, Baldasaro, P, Campbell, B, Loughin, S, Svensson, S, & Gill, D. MBE growth of GaInAsSb p/n junction diodes for thermophotovoltaic applications. United States.
Uppal, P N, Charache, G, Baldasaro, P, Campbell, B, Loughin, S, Svensson, S, and Gill, D. Thu . "MBE growth of GaInAsSb p/n junction diodes for thermophotovoltaic applications". United States. https://www.osti.gov/servlets/purl/350923.
@article{osti_350923,
title = {MBE growth of GaInAsSb p/n junction diodes for thermophotovoltaic applications},
author = {Uppal, P N and Charache, G and Baldasaro, P and Campbell, B and Loughin, S and Svensson, S and Gill, D},
abstractNote = {This paper reports recent progress in the development of quaternary III-V thermophotovoltaic (TPV) devices based on MBE grown Ga{sub x}In{sub 1{minus}x}As{sub y}Sb{sub 1{minus}y}. TPV is of great interest for a variety of applications. The objective of this work is to develop a TPV cell which is tunable to the emission spectrum of a heated blackbody, at temperatures in the range of 1200--1473 K. One aspect of this tuning is to match the band gap, E{sub gap}, of the photovoltaic device to the peak output of the heat source., An advantage of the quarternary III-V semiconductor systems is that devices can be fabricated by molecular beam epitaxy on a suitable binary substrate, such as GaSb or InAs, and the band gap and lattice constant can be adjusted more or less independently, to match requirements. Quarternary cells, with band-gaps in the 0.5 to 0.72 eV range, have been fabricated and tested. For 0.54 eV devices the authors obtained V{sub oc} = 0.3 V and I{sub sc} = 1.5 amperes/cm{sup 2} under infrared illumination of a 1200 K blackbody. Under high illumination levels the V{sub oc} and I{sub sc} ranged from 0.5 V at 3 amperes/cm{sup 2} for 0.72 eV devices to 0.31 V at 1.2 amperes/cm{sup 2} for 0.5 eV devices, indicating good photovoltaic device characteristics over the range of bandgaps. The diode ideality factor for 0.54 eV devices ranged from 2.45 at low illumination indicating tunneling-dominated dark current, to 1.7 at high illumination intensity indicating recombination-generation dominated dark currents.},
doi = {},
url = {https://www.osti.gov/biblio/350923}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {8}
}

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