Leakage currents in SOI MOSFETS
Total dose response of both NMOS and PMOS FETs fabricated on SOI substrates was studied. Two types of back-channel leakage currents were identified. A back-channel leakage due to MOSFET action uses the substrate bias as the gate bias. The other component is due to soft reverse characteristics of the body-drain junction. The back-channel leakage due to MOSFET action varies with the substrate bias and hence varies with irradiation due to threshold voltage shift. The soft reverse characteristics are a function of drain-body voltage and hence vary with substrate bias and irradiation. I-V characteristics and subthreshold currents of both front and back channels as a function of total dose were obtained.
- Research Organization:
- Radiation Hardened Electronics Div., Hanscom AFB, MA (US); Dept. of Electrical and Computer Engineering, Northeastern Univ., Boston, MA (US)
- OSTI ID:
- 6268352
- Report Number(s):
- CONF-880730-
- Journal Information:
- IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. 35:6; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
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46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
654001* -- Radiation & Shielding Physics-- Radiation Physics
Shielding Calculations & Experiments
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
CHALCOGENIDES
CURRENTS
ELECTRIC CURRENTS
FABRICATION
FIELD EFFECT TRANSISTORS
IRRADIATION
LEAKAGE CURRENT
MOS TRANSISTORS
MOSFET
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SILICON COMPOUNDS
SILICON OXIDES
SUBSTRATES
TRANSISTORS