Electrical and optical properties of ion beam sputtered ZnO:Al films as a function of film thickness
Journal Article
·
· Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States)
- Colorado School of Mines, Golden, Colorado 80401 (United States)
- National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
Electrical and optical properties of as-deposited, ion beam sputtered, Al-doped ZnO films have been studied as a function of film thickness and carrier concentration. Hall effect measurements reveal that the bulk electrical resistivity of the film generally decreases with increasing film thickness. Additionally, it is observed that the rate of decreasing resistivity depends on the particular film thickness regime. For thinner films (100--200 nm), the resistivity decreases rapidly with increasing film thickness and is due to increases in both carrier concentration and Hall mobility. However, for thicker films, the resistivity decreases more slowly with increasing film thickness and approaches a nearly constant value at a thickness of 1100 nm. In this thickness regime, the slight decrease in resistivity with increasing film thickness is found to be due to an increase in carrier concentration alone. The above observations suggest the presence of at least two scattering mechanisms. It is speculated that grain boundary and ionized impurity are the most likely mechanisms. These issues, together with observed optical properties of the films, are discussed.
- DOE Contract Number:
- AC02-83CH10093
- OSTI ID:
- 6266780
- Journal Information:
- Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States), Journal Name: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States) Vol. 11:4; ISSN 0734-2101; ISSN JVTAD6
- Country of Publication:
- United States
- Language:
- English
Similar Records
Study of ion-beam-sputtered ZnO films as a function of deposition temperature
Homobuffer thickness effect on the background electron carrier concentration of epitaxial ZnO thin films
Effect of thickness on the structural, electrical and optical properties of ZnO films
Journal Article
·
Fri Jul 01 00:00:00 EDT 1994
· Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States)
·
OSTI ID:7174869
Homobuffer thickness effect on the background electron carrier concentration of epitaxial ZnO thin films
Journal Article
·
Wed Sep 15 00:00:00 EDT 2010
· Journal of Applied Physics
·
OSTI ID:21476479
Effect of thickness on the structural, electrical and optical properties of ZnO films
Journal Article
·
Thu May 03 00:00:00 EDT 2007
· Materials Research Bulletin
·
OSTI ID:21000635
Related Subjects
36 MATERIALS SCIENCE
360204* -- Ceramics
Cermets
& Refractories-- Physical Properties
ALLOYS
ALUMINIUM ADDITIONS
ALUMINIUM ALLOYS
CARRIER DENSITY
CARRIER MOBILITY
CHALCOGENIDES
DIMENSIONS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ENERGY-LEVEL DENSITY
FILMS
GRAIN BOUNDARIES
HALL EFFECT
MICROSTRUCTURE
MOBILITY
OPTICAL PROPERTIES
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
SPUTTERING
THICKNESS
THIN FILMS
ZINC COMPOUNDS
ZINC OXIDES
360204* -- Ceramics
Cermets
& Refractories-- Physical Properties
ALLOYS
ALUMINIUM ADDITIONS
ALUMINIUM ALLOYS
CARRIER DENSITY
CARRIER MOBILITY
CHALCOGENIDES
DIMENSIONS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ENERGY-LEVEL DENSITY
FILMS
GRAIN BOUNDARIES
HALL EFFECT
MICROSTRUCTURE
MOBILITY
OPTICAL PROPERTIES
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
SPUTTERING
THICKNESS
THIN FILMS
ZINC COMPOUNDS
ZINC OXIDES