Mechanisms controlling temperature dependent mechanical and electrical behavior of SiH sub 4 reduced chemically vapor deposited W
- IBM, T. J. Watson Research Center, Yorktown Heights, NY 10598 (USA)
- Department of Mechanical Engineering, Columbia University, New York, NY 10027 (USA)
The effects of deposition temperature on growth, composition, structure, adhesion properties, stress, and resistivity of chemically vapor deposited W deposited purely by SiH{sub 4} reduction of WF{sub 6} are discussed. At lower deposition temperatures, due to incomplete Si reduction reaction, a small amount of Si is incorporated in the film. This elemental Si in W is responsible for the observed high stresses and high resistivities over a wide temperature range. With the increase in the deposition temperature, the conversion of incorporated Si as well as the initial Si reduction are taking place, stimulating increased grain growth and thereby relieving stress and reducing resistivity. The optimum values for stress and resistivity are achieved around 500 {degree}C, as Si content is at its minimum. At higher temperatures the reaction between residual Si and W, is the prime cause of resistivity increase.
- OSTI ID:
- 6260920
- Journal Information:
- Journal of Applied Physics; (USA), Vol. 68:11; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
TUNGSTEN
CHEMICAL VAPOR DEPOSITION
ELECTRIC CONDUCTIVITY
MECHANICAL PROPERTIES
ADHESION
FILMS
SILANES
STRESSES
TEMPERATURE DEPENDENCE
TUNGSTEN FLUORIDES
CHEMICAL COATING
DEPOSITION
ELECTRICAL PROPERTIES
ELEMENTS
FLUORIDES
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
HYDRIDES
HYDROGEN COMPOUNDS
METALS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PHYSICAL PROPERTIES
REFRACTORY METAL COMPOUNDS
SILICON COMPOUNDS
SURFACE COATING
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TUNGSTEN COMPOUNDS
360103* - Metals & Alloys- Mechanical Properties
360104 - Metals & Alloys- Physical Properties