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Title: Mechanisms controlling temperature dependent mechanical and electrical behavior of SiH sub 4 reduced chemically vapor deposited W

Journal Article · · Journal of Applied Physics; (USA)
DOI:https://doi.org/10.1063/1.346974· OSTI ID:6260920
 [1];  [2]; ; ;  [1]
  1. IBM, T. J. Watson Research Center, Yorktown Heights, NY 10598 (USA)
  2. Department of Mechanical Engineering, Columbia University, New York, NY 10027 (USA)

The effects of deposition temperature on growth, composition, structure, adhesion properties, stress, and resistivity of chemically vapor deposited W deposited purely by SiH{sub 4} reduction of WF{sub 6} are discussed. At lower deposition temperatures, due to incomplete Si reduction reaction, a small amount of Si is incorporated in the film. This elemental Si in W is responsible for the observed high stresses and high resistivities over a wide temperature range. With the increase in the deposition temperature, the conversion of incorporated Si as well as the initial Si reduction are taking place, stimulating increased grain growth and thereby relieving stress and reducing resistivity. The optimum values for stress and resistivity are achieved around 500 {degree}C, as Si content is at its minimum. At higher temperatures the reaction between residual Si and W, is the prime cause of resistivity increase.

OSTI ID:
6260920
Journal Information:
Journal of Applied Physics; (USA), Vol. 68:11; ISSN 0021-8979
Country of Publication:
United States
Language:
English