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Picosecond amplification and kinetic studies of XeCl

Journal Article · · IEEE J. Quant. Electron.; (United States)

A 2 ps pulse derived by frequency doubling the amplified output of a CW mode-locked dye laser has been used to probe the gain characteristics of XeC1 in the 308 nm region. Energy saturation parameters were measured for the four main laser transitions. The gain kinetics of XeC1 were investigated by observing the temporal gain recovery after the passage of a saturating picosecond pulse, and the contribution of the various relaxation processes to the XeC1 gain dynamics is discussed. Evidence suggests that vibrational relaxation in the upper laser level is incomplete during the effective lifetime of XeC1*. Taken together, these measurements have permitted the determination of a stimulated emission cross section of general utility. To demonstrate the potential of XeC1 for high power amplification, a picosecond pulse was amplified to a power of about 20 GW.

Research Organization:
Division of Physics, National Research Council of Canada, Ottawa, Ont., CA K1A OR6
OSTI ID:
6260828
Journal Information:
IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. 18:11; ISSN IEJQA
Country of Publication:
United States
Language:
English