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Stability of group IV-VI semiconductor alloys

Journal Article · · Phys. Rev. B: Condens. Matter; (United States)

We present transmission electron microscopy results on Pb/sub 1/minus//ital x//Eu/sub /ital x//Te alloys that show evidence for a compositional instability for /ital x/approx.0.5 when the alloys are grown on BaF/sub 2/ substrates. The Pb/sub 1/minus//ital x//Eu/sub /ital x//Te alloy becomes stable at room temperature if a buffer layer of PbTe is grown on the BaF/sub 2/ substrate prior to the growth of the Pb/sub 1/minus//ital x//Eu/sub /ital x//Te layer. The stabilization of the Pb/sub 1/minus//ital x//Eu/sub /ital x//Te solid solution is the result of the additional energy term due to the strain between the Pb/sub 1/minus//ital x//Eu/sub /ital x//Te film and the PbTe buffer layer. The estimated critical temperatures for decomposition of the Pb/sub 1/minus//ital x//Eu/sub /ital x//Te alloys with and without the PbTe buffer layer are approx.0 and approx.366 K, respectively, in accord with the experimental observations.

Research Organization:
Department of Chemical and Nuclear Engineering, University of Maryland, College Park, Maryland 20742(US); General Motors Research Laboratories, Warren, Michigan 48090
OSTI ID:
6259801
Journal Information:
Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 39:15; ISSN PRBMD
Country of Publication:
United States
Language:
English