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Title: Investigation of epitaxial growth via high-resolution helium atom scattering: KBr onto RbCl(001)

Journal Article · · Journal of Physical Chemistry; (United States)
DOI:https://doi.org/10.1021/j100111a008· OSTI ID:6259211
; ; ; ;  [1]
  1. Florida State Univ., Tallahassee (United States)

High-resolution He atom scattering experiments have been employed to study the growth of KBr onto a cleaved RbCl(001) surface in the temperatures range [approximately]180--220 K. Three kinds of measurements were carried out: deposition curves (specular intensity vs deposition time), angular distribution (total scattering intensity vs incident angle), and time-of-flight spectra. The oscillations in the deposition curves show the characteristic behavior of layer-by-layer growth. However, the analysis of the data indicates that the step height of the first layer is different from that of subsequent layers, 3.71 [angstrom] compared with 3.32 [angstrom] expected from the bulk lattice spacing. The results also suggest that the growth mode in this temperature range is to form numerous small islands initially which then merge together with continued deposition. At the same time the defect density is very low for the first monolayer, but it increases with the number of layers grown. Analysis of the time-of-flight spectra for the one monolayer film yields surface phonon dispersion branches consisting of the Rayleigh wave, a longitudinal resonance, and a surface optical mode lying in the gap between the bulk optical and acoustic bands. The Rayleigh wave appears very nearly the same as that for cleaved RbCl and KBr(001) surfaces (very similar to each other); the other branches are significantly softened. 54 refs., 12 figs.

DOE Contract Number:
FG05-85ER45208
OSTI ID:
6259211
Journal Information:
Journal of Physical Chemistry; (United States), Vol. 97:9; ISSN 0022-3654
Country of Publication:
United States
Language:
English