Optical polarization bistability in TM wave injected semiconductor lasers
Journal Article
·
· IEEE J. Quant. Electron.; (United States)
Detailed experimental results of optical polarization bistability in InGaAsP semiconductor lasers are reported. Then, the causes of polarization switching and nonlinear response in this bistability are discussed. The light input signal consisted of the transverse magnetic (TM) wave, while the semiconductor lasers operated in a fundamental transverse electric (TE) mode when the light input was not injected. The light output versus light input characteristics were dependent on the input wavelength. Switching times of up to a few hundred picoseconds were achieved for both switch-up and switch-down. The authors found that the TE and TM outputs originate from the TE oscillation and the TM amplification, respectively. The calculation using the rate equations showed that the TM input induces the nonlinearity of the carrier density. These results support that this bistability is a type of dispersive bistability.
- Research Organization:
- Semiconductor Research Center, Opto-Electronics Lab., Matsushita Electric Industrial Co., Ltd., 3-15 Yagumo-Nakamachi, Moriguchi, Osaka (JP)
- OSTI ID:
- 6258794
- Journal Information:
- IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. 25:3; ISSN IEJQA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360603 -- Materials-- Properties
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CALCULATION METHODS
CARRIER DENSITY
DATA
ELECTRONIC CIRCUITS
EQUATIONS
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
LASERS
MAGNETIC PROPERTIES
MODE SELECTION
NONLINEAR PROBLEMS
NUMERICAL DATA
OPTICAL PROPERTIES
OSCILLATIONS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
POLARIZATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
STABILITY
SWITCHING CIRCUITS
360603 -- Materials-- Properties
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CALCULATION METHODS
CARRIER DENSITY
DATA
ELECTRONIC CIRCUITS
EQUATIONS
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
LASERS
MAGNETIC PROPERTIES
MODE SELECTION
NONLINEAR PROBLEMS
NUMERICAL DATA
OPTICAL PROPERTIES
OSCILLATIONS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
POLARIZATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
STABILITY
SWITCHING CIRCUITS