Optical polarization bistability with high switching speed in a TM wave injected buried heterostructure laser

Journal Article · Mon Dec 14 04:00:00 EST 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98314· OSTI ID:5732701

Mori, Y; Shibata, J; Kajiwara, T

We demonstrate optical polarization bistability in a semiconductor laser for the first time. Only the optical signal pulses are used as triggers for switching the transverse mode of the laser. The two stable states are identified as the transverse electric mode and the transverse magnetic mode, respectively, while the optical input consists of the transverse magnetic wave. Switching speeds up to a few hundred picoseconds have been achieved for both switch-up and switch-down.

• Research Organization: Matsushita Electric Industrial Co., Ltd., Semiconductor Research Center, Opto-Electronics Laboratory, 3-15, Yagumo-Nakamachi, Moriguchi, Osaka 570, Japan
• OSTI ID: 5732701
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 51:24; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
ELECTRICAL EQUIPMENT
EQUIPMENT
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HYSTERESIS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASER CAVITIES
LASERS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
POLARIZATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
STABILITY
SWITCHES