Monolithically integrated transverse-junction-stripe laser with an external waveguide in GaAs/AlGaAs

Journal Article · Tue Jan 31 23:00:00 EST 1989 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/3.16258· OSTI ID:6258699

Vawtr, G A; Merz, J L; Coldren, L A

A new type of laser source for integration with optical waveguides in GaAs/AlGaAs has been developed. This new device consists of a five-layer transverse-junction-stripe laser structure monolithically integrated with an external three-layer waveguide. The transverse p-n junction within the laser cavity permits the use of a vertical p-n junction in the external waveguide for future implementation of a modulator without disturbing the laser operation. As a result, this new structure allows for flexibility in the design of the external waveguide/modulator without resorting to complicated regrowth procedures. Design curves for two different types of optical cavities are presented, and the reflectivity and transmission of the etched facet as a function of active layer thickness is modeled in detail using an excitation field approach. Finally, integrated laser/waveguide devices are fabricated based on the above design and are compared to the theoretical curves. Most devices had threshold currents between 60 and 80 mA, while laser to waveguide transmission coefficients were measured as high as 38 percent.

• Research Organization: Sandia National Labs., Albuquerque, NM (US); Dept. of Electrical and Computer Engineering, Univ. of California, Santa Barbara, CA (US)
• OSTI ID: 6258699
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. 25:2; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
DESIGN
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
JUNCTION DIODES
LASER CAVITIES
LASERS
PERFORMANCE
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
WAVEGUIDES