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Title: Phase-selective route to high T sub c superconducting Tl sub 2 Ba sub 2 Ca sub n minus 1 Cu sub n O sub 2 n +4 films: Combined metalorganic chemical vapor deposition using an improved barium precursor and stoichiometry-controlled thallium vapor diffusion

Journal Article · · Applied Physics Letters; (USA)
DOI:https://doi.org/10.1063/1.104966· OSTI ID:6258448
; ; ; ; ;  [1]
  1. Science and Technology Center for Superconductivity and the Materials Research Center, Northwestern University, Evanston, Illinois 60208 (US)

Films of the Tl{sub 2}Ba{sub 2}Ca{sub {ital n}{minus}1}Cu{sub {ital n}}O{sub 2{ital n}+4} high {ital T}{sub {ital c}} superconductors ({ital n}=2 or 3) can be prepared with a high degree of phase selectivity using a combination of metalorganic chemical vapor deposition (MOCVD) and vapor diffusion. Ba-Ca-Cu-O films are first prepared by MOCVD using the volatile metalorganic precursors Ba(hexafluoroacetyl- acetonate){sub 2}(tetraglyme), Ca(dipivaloylmethanate){sub 2}, and Cu(acetylacetonate){sub 2}. The second-generation'' barium precursor exhibits significantly improved thermal stability and volatility over previously used compounds. Thallium is then incorporated into these films by vapor diffusion using a Tl-Ba-Ca-Cu oxide mixture of controlled composition as the source of volatile thallium oxides. Phase control is achieved by a combination of improved stoichiometry of the deposited film, a result of the new Ba source, and annealing with the appropriate oxide mixture. The resultant films consist predominantly of the Tl{sub 2}Ba{sub 2}Ca{sub 2}Cu{sub 3}O{sub {ital x}} or Tl{sub 2}Ba{sub 2}CaCu{sub 2}O{sub {ital x}} phase, each having preferential orientation of the crystallite Cu-O planes parallel to the substrate surface. The films exhibit superconducting onset temperatures of {similar to}115 K with zero resistance by 93 and 85 K, respectively. Critical current densities for a number of films, estimated by the Bean method, are in the range 10{sup 4}--10{sup 5} A/cm{sup 2} at 5 K.

OSTI ID:
6258448
Journal Information:
Applied Physics Letters; (USA), Vol. 58:2; ISSN 0003-6951
Country of Publication:
United States
Language:
English