Efficient electron-beam-deposited ITO/n-Si solar cells

Journal Article · Sun Jul 01 00:00:00 EDT 1979 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.325574· OSTI ID:6241817

Feng, T; Ghosh, A K; Fishman, C

Indium tin oxide/silicon heterojunction solar cells with power conversion efficiencies of 10% in AM1 solar spectrum were fabricated. The indium tin oxide (ITO) films were deposited onto n-type silicon by electron-beam evaporation of a mixture of 90 : 10 molar% In/sub 2/O/sub 3/ : SnO/sub 2/ powder. As in SnO/sub 2//n-Si cells, the efficiencies of these cells depend upon the angle of incidence of the ITO vapor stream to silicon. We have found the photovoltaic properties of these cells to be very similar to those of SnO/sub 2//n-Si devices.

• Research Organization: Exxon Research and Engineering Company, Linden, New Jersey 07036
• OSTI ID: 6241817
• Journal Information: J. Appl. Phys.; (United States), Vol. 50:7
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SOLAR CELLS
DEPOSITION
EFFICIENCY
ELECTRON BEAMS
FABRICATION
INDIUM
JUNCTIONS
MIXTURES
N-TYPE CONDUCTORS
OXIDES
PHOTOVOLTAIC EFFECT
SILICON
SPECTRA
TIN
BEAMS
CHALCOGENIDES
DIRECT ENERGY CONVERTERS
DISPERSIONS
ELEMENTS
LEPTON BEAMS
METALS
OXYGEN COMPOUNDS
PARTICLE BEAMS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR MATERIALS
SEMIMETALS
140501* - Solar Energy Conversion- Photovoltaic Conversion