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U.S. Department of Energy
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Thin film polycrystalline silicon solar cells. Quarterly report No. 3, July 1, 1979-September 30, 1979

Technical Report ·
DOI:https://doi.org/10.2172/5478416· OSTI ID:5478416
The details of the fabrication procedures for making SnO/sub 2//n-Si, ITO/n-Si, and MIS solar cells are given. Using a low cost and highly reproducible spray deposition process for tin oxide and indium tin oxide, we made SnO/sub 2//n-Si and ITO/n-Si, solar cells with power conversion efficiencies of 10 and 13% for polycrystalline (Wacker) and single crystal silicon, respectively. Continued improvements in the efficiencies of diffused p-n junction cells were made; efficiencies of 10.3 and 9% were obtained for polysilicon (Wacker) cells of 1- and 20-cm/sup 2/ sizes, respectively. The effects of grain boundaries on the generation of photocurrent were studied using the EBIC technique. In addition to using the intensity modulated mode, a y- modulation technique, which gave more details, was used in the EBIC studies. By studying the Hall mobility of polysilicon in the dark and under illumination, we have developed a phenomenological theory which is capable of explaining the observed resistivity and mobility results. A comparison of the spectral response curves of SnO/sub 2//n-Si heterojunction and diffused p/n junction cells indicates a lower diffusion length in the diffused cells. The stability studies of the SnO/sub 2//n-Si cells were continued.
Research Organization:
Exxon Research and Engineering Co., Linden, NJ (USA). Advanced Energy Systems Labs.
DOE Contract Number:
AC03-79ET23047
OSTI ID:
5478416
Report Number(s):
DOE/SF/23047-3
Country of Publication:
United States
Language:
English