Radiation-induced carbon-related defects in p-type silicon

Journal Article · Sat Apr 15 00:00:00 EDT 1989 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.343411· OSTI ID:6240412

Frederickson, A R; Karakashian, A S; Drevinsky, P J; Caefer, C E

The production and removal of carbon-related defects have been investigated in 1-MeV electron-irradiated boron-doped silicon solar cells using deep level transient spectroscopy (DLTS). In Czochralski (CZ) material, the interstitial carbon defect (hole trap at E/sub v/+0.27 eV), C/sub I/, decays by thermal and charge injection processes. We find that irradiation by MeV electrons creates C/sub I/ while simultaneously removing it through the minority-carrier injection process. Removal of C/sub I/ correlates with significant growth in the density of a complex reportedly consisting of carbon and oxygen (hole trap at E/sub v/+0.38 eV). Thermal annealing produces a different DLTS signal than does minority-carrier injection indicating that the carbon and oxygen complex (C+O) is at least two species. The effective cross section for minority-carrier-induced annealing of C/sub I/ is found to be 2 x 10/sup -18/ cm/sup 2/ in these samples.

• Research Organization: Air Force Geophysics Laboratory, Space Physics Division, Hanscom Air Force Base, Massachusetts 01731
• OSTI ID: 6240412
• Journal Information: J. Appl. Phys.; (United States), Vol. 65:8
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SILICON SOLAR CELLS
PHYSICAL RADIATION EFFECTS
ANNEALING
BORON ADDITIONS
CRYSTAL DEFECTS
DEEP LEVEL TRANSIENT SPECTROSCOPY
ELECTRON COLLISIONS
MEV RANGE 01-10
P-TYPE CONDUCTORS
ALLOYS
BORON ALLOYS
COLLISIONS
CRYSTAL STRUCTURE
DIRECT ENERGY CONVERTERS
ENERGY RANGE
EQUIPMENT
HEAT TREATMENTS
MATERIALS
MEV RANGE
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
RADIATION EFFECTS
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SOLAR EQUIPMENT
SPECTROSCOPY
140501* - Solar Energy Conversion- Photovoltaic Conversion