Selected area polishing for precision TEM sample preparation

Journal Article · Wed Sep 01 00:00:00 EDT 1993 · Microscopy Research and Technique; (United States)

DOI:https://doi.org/10.1002/jemt.1070260209· OSTI ID:6230966

Liu, J B ^[1]; Tracy, B M ^[2]; Gronsky, R ^[3]

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1. Intel Corp., Santa Clara, CA (United States). Materials Technology Dept. Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering
2. Intel Corp., Santa Clara, CA (United States). Materials Technology Dept.
3. Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering

A selected area mechanical polishing technique has been developed to improve the precision of cross-sectional TEM sample preparation, based upon the early work of Benedict and colleagues. TEM samples were made from a pre-selected section through the middle of a 1 [mu]m wide band of transistors extending laterally for more than 1 mm by precise control over the plane of polish with a corresponding reduction in sample preparation time. To illustrate the application of this technique, a uniformly thin, electron transparent TEM sample of a single, specific, failed transistor is obtained from a 4 mm by 10 mm device array.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 6230966
• Journal Information: Microscopy Research and Technique; (United States), Vol. 26:2; ISSN 1059-910X
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
TRANSISTORS
FAILURE MODE ANALYSIS
TRANSMISSION ELECTRON MICROSCOPY
SAMPLE PREPARATION
DESTRUCTIVE TESTING
OPERATION
POLISHING
ELECTRON MICROSCOPY
MATERIALS TESTING
MICROSCOPY
SEMICONDUCTOR DEVICES
SURFACE FINISHING
SYSTEM FAILURE ANALYSIS
SYSTEMS ANALYSIS
TESTING
420500* - Engineering- Materials Testing