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Title: Epitaxial Growth of Yb 2O 3 Buffer Layers on Biaxially Textured-Ni (100) Substrates by Sol-Gel Process

Abstract

In order to develop an alternative buffer layer architecture using the sol-gel process to produce YBCO (YBa2Cu307+) coated conductors, Yb203 has been chosen as the candidate material. Buffer layers of fi03 were epitaxkdly grown on biaxially textured-Ni (100) substrates by the sol gel process for the first time. The ~03 precursor solution was prepared from an alkoxide sol-gel route in 2-xnetho~ethanol and was deposited on textured-Ni (100) substrates by either spin coating or dip coating methods. The amorphous film was then processed at 1160oC under flowing (96%)MH2(4%) gas mixture for one hour. The fi03 iihn exhibited a strong c-axis orientation on the Ni (100) substrates. The phi and omega scans indicated good in plane and out of plane orientations. The X-ray (222) pde figure showed a cube-on-cube epitaxy. High current YBCO films were grown on the Y&03 sol-gel buffered-Ni substrates.

Authors:
; ; ; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Oak Ridge, TN
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
6225
Report Number(s):
ORNL/CP-102590
KC 02 03 01; EB 50 01 00 0; ON: DE00006225
DOE Contract Number:  
AC05-96OR22464
Resource Type:
Conference
Resource Relation:
Conference: Spring Meeting of the Materials Research Society, San Francisco, CA, April 5-9, 1999
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION; Ytterbium Oxides; Epitaxy; Sol-Gel Process

Citation Formats

Beach, D B, Chirayil, T G, Christen, D K, Feenstra, R, Goyal, A, Kroeger, D M, Lee, D F, Martin, P M, Morrell, J S, Paranthaman, M, Sun, E Y, Verebelyi, D T, and Williams, R K. Epitaxial Growth of Yb2O3 Buffer Layers on Biaxially Textured-Ni (100) Substrates by Sol-Gel Process. United States: N. p., 1999. Web.
Beach, D B, Chirayil, T G, Christen, D K, Feenstra, R, Goyal, A, Kroeger, D M, Lee, D F, Martin, P M, Morrell, J S, Paranthaman, M, Sun, E Y, Verebelyi, D T, & Williams, R K. Epitaxial Growth of Yb2O3 Buffer Layers on Biaxially Textured-Ni (100) Substrates by Sol-Gel Process. United States.
Beach, D B, Chirayil, T G, Christen, D K, Feenstra, R, Goyal, A, Kroeger, D M, Lee, D F, Martin, P M, Morrell, J S, Paranthaman, M, Sun, E Y, Verebelyi, D T, and Williams, R K. Mon . "Epitaxial Growth of Yb2O3 Buffer Layers on Biaxially Textured-Ni (100) Substrates by Sol-Gel Process". United States. https://www.osti.gov/servlets/purl/6225.
@article{osti_6225,
title = {Epitaxial Growth of Yb2O3 Buffer Layers on Biaxially Textured-Ni (100) Substrates by Sol-Gel Process},
author = {Beach, D B and Chirayil, T G and Christen, D K and Feenstra, R and Goyal, A and Kroeger, D M and Lee, D F and Martin, P M and Morrell, J S and Paranthaman, M and Sun, E Y and Verebelyi, D T and Williams, R K},
abstractNote = {In order to develop an alternative buffer layer architecture using the sol-gel process to produce YBCO (YBa2Cu307+) coated conductors, Yb203 has been chosen as the candidate material. Buffer layers of fi03 were epitaxkdly grown on biaxially textured-Ni (100) substrates by the sol gel process for the first time. The ~03 precursor solution was prepared from an alkoxide sol-gel route in 2-xnetho~ethanol and was deposited on textured-Ni (100) substrates by either spin coating or dip coating methods. The amorphous film was then processed at 1160oC under flowing (96%)MH2(4%) gas mixture for one hour. The fi03 iihn exhibited a strong c-axis orientation on the Ni (100) substrates. The phi and omega scans indicated good in plane and out of plane orientations. The X-ray (222) pde figure showed a cube-on-cube epitaxy. High current YBCO films were grown on the Y&03 sol-gel buffered-Ni substrates.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {4}
}

Conference:
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