Properties of variable-thickness NbN microbridges

Journal Article · Mon Jan 31 23:00:00 EST 1983 · J. Low Temp. Phys.; (United States)

DOI:https://doi.org/10.1007/BF00681608· OSTI ID:6224765

Saito, Y; Hosaka, S; Suganomata, S

Variable-thickness NbN microbridges have been fabricated by ion etching, using photoresistant mask and obliquely evaporated Al films. A tungsten needle approx.3 ..mu..m in diameter is placed across the slit produced in the photoresist to define the bridge width. The NbN microbridges show many well-defined constant-voltage steps under microwave irradiation.

• Research Organization: Department of Electrical Engineering, Yamanashi University, Kofu, Japan
• OSTI ID: 6224765
• Journal Information: J. Low Temp. Phys.; (United States), Journal Name: J. Low Temp. Phys.; (United States) Vol. 50:3; ISSN JLTPA
• Country of Publication: United States
• Language: English

Related Subjects

420201* -- Engineering-- Cryogenic Equipment & Devices
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CHARGED PARTICLES
COHERENCE LENGTH
DIMENSIONS
ELECTRIC BRIDGES
ELECTRIC CONDUCTIVITY
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
EQUIPMENT
ETCHING
IONS
JOSEPHSON JUNCTIONS
JUNCTIONS
LENGTH
MICROWAVE RADIATION
NIOBIUM COMPOUNDS
NIOBIUM NITRIDES
NITRIDES
NITROGEN COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
RADIATIONS
SUPERCONDUCTING JUNCTIONS
SURFACE FINISHING
THERMODYNAMIC PROPERTIES
TRANSITION ELEMENT COMPOUNDS
TRANSITION TEMPERATURE