Structure and electrical activity of planar defects in EFG ribbons. First quarterly report, January 1--March 31, 1979

Technical Report · Sun Apr 15 04:00:00 EST 1979

DOI:https://doi.org/10.2172/6220417· OSTI ID:6220417

Ast, D G

The structure and electrical activity of planar defects in EFG Silicon was investigated by optical, electron beam induced current (EBIC), and transmission electron microscopy (TEM). What appears to be twin boundaries by both optical microscopy + etching, and by EBIC are in reality systems of microtwins, some of which are only a few atomic lattice planes thick. The electrical activity of planar defects appears to be correlated with emission of dislocations especially at termination points. Impurity effects may also play a role. Twin boundaries per se appear not to be electricaly active.

• Research Organization: Cornell Univ., Ithaca, NY (USA)
• DOE Contract Number: NAS-7-100-954852
• OSTI ID: 6220417
• Report Number(s): DOE/JPL/954852-1
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360602 -- Other Materials-- Structure & Phase Studies
360603 -- Materials-- Properties
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CURRENTS
DISLOCATIONS
ELECTRIC CURRENTS
ELECTRON MICROSCOPY
ELEMENTS
ETCHING
IMPURITIES
LINE DEFECTS
MICROSCOPY
MICROSTRUCTURE
OPTICAL MICROSCOPY
SEMIMETALS
SILICON
SURFACE FINISHING
TWINNING