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Title: Photovoltage and stability of an n-type silicon semiconductor coated with metal or metal-free phthalocyanine thin films in aqueous redox solutions

Journal Article · · J. Phys. Chem.; (United States)
DOI:https://doi.org/10.1021/j150612a014· OSTI ID:6216514

An n-type silicon (n-Si) semiconductor coated with an evaporated thin film of metal phthalocyanine (MPc) or metal-free phthalocyanine (H/sub 2/Pc) worked as a fairly stable photoanode in aqueous redox solutions. The photovoltage observed for a photocell, (n-Si/CuPc/Fe/sup 3 +//Fe/sup 2 +/ aqueous solution (pH 4.2) /Pt), was 0.50 V, only slightly less than that for a p-n junction Si photocell (approx. 0.6 V). The action spectrum was similar to that of a bare n-Si electrode, except for a depression caused by photoabsorption by the CuPc film in the red region. The above wet photocell has current-voltage characteristics better than those for a solid photocell, (n-Si/CuPc/Pd).

Research Organization:
Osaka Univ., Toyonaka, Japan
OSTI ID:
6216514
Journal Information:
J. Phys. Chem.; (United States), Vol. 85:12
Country of Publication:
United States
Language:
English