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Semiconductor electrodes. 43. The effect of light intensity and iodine doping on the stabilization of n-silicon by phthalocyanine films

Journal Article · · J. Phys. Chem.; (United States)
DOI:https://doi.org/10.1021/j100397a036· OSTI ID:6538855

The stability of n-Si vacuum-coated with metal-free phthalocyanine (H/sub 2/Pc) and copper phthalocyanine (CuPc) was studied as a function of the light intensity and redox couple in aqueous solutions. Although the photocurrent at an n-Si coated with H/sub 2/Pc or CuPc decayed slowly at low light intensities (1 mW/cm/sup 2/), photopassivation was rapid at higher light intensities (100 mW/cm/sup 2/). The magnitude of photocurrent and the inhibition photocorrosion depended upon the solution conditions. Addition of iodine, which is a dopane for the Pc layer led to larger photoeffects and a lower rate of photopassivation, although the electrode was still unstable after longer irradiation times. Further improvement in stability was observed in the presence of the highly concentrated electrolyte, 11 M LiCl.

Research Organization:
Univ. of Texas, Austin
OSTI ID:
6538855
Journal Information:
J. Phys. Chem.; (United States), Journal Name: J. Phys. Chem.; (United States) Vol. 86:8; ISSN JPCHA
Country of Publication:
United States
Language:
English