Silicon ion beam epitaxy
Conference
·
OSTI ID:621311
- Univ. of Houston, TX (United States); and others
Direct ion beam deposition of {sup 28}Si{sup +} ions for homoepitaxial film growth on Si(100) has been studied over the ion energy range of 8-80 eV in the low temperature range of 400-500{degrees}C. Deposition was performed by means of a mass-selected, UHV ion beam system with a well-defined energy for which the energy spread is {delta}E={+-}3 eV. The films were analyzed in situ at growth intervals by RHEED and AES and ex situ by TEM, RBS, and SIMS. The growth mode, crystalline quality, and number of defects are found to be extremely sensitive to both substrate temperature and ion energy. An optimum ion energy window for achieving layer-by-layer growth and high crystalline quality films is observed. This behavior is discussed in terms of the changes in the phenomena which dominate the growth process as a function of ion energy and temperature.
- OSTI ID:
- 621311
- Report Number(s):
- CONF-9606110--; CNN: Grant DMR-9224377; Grant 003652-909; Grant E656
- Country of Publication:
- United States
- Language:
- English
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