Epitaxial growth of silicon on CoSi sub 2 (001)/Si(001)

Conference · Mon Dec 31 23:00:00 EST 1990

OSTI ID:5691245

Xiao, Q F ^[1]; Jimenez, J R; Schowalter, L J ^[2]; Luo, L; Mitchell, T E ^[3]; Gibson,

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1. State Univ. of New York, Albany, NY (USA). Dept. of Physics Rensselaer Polytechnic Inst., Troy, NY (USA). Center for Integrated Electronics
2. Rensselaer Polytechnic Inst., Troy, NY (USA). Center for Integrated Electronics Rensselaer Polytechnic Inst., Troy, NY (USA). Dept. of Physics
3. Los Alamos National Lab., NM (USA)

Epitaxial Si layers have been grown under a variety of growth conditions on CoSi{sub 2}(001) by molecular beam epitaxy (MBE). The structural properties of the Si overgrowth were studied by in-situ Reflection High Energy Electron Diffraction (RHEED), as well as ex-situ MeV {sup 4}He{sup +} ion channeling and High Resolution Transmission Electron Microscopy (HRTEM). Strong influences of the CoSi{sub 2} surface reconstruction on the Si overgrowth have been observed. RHEED studies show islanding growth Si on the CoSi{sub 2} (001) ({radical}2 {times} {radical}2)R45 reconstructed surface, but smooth growth of Si on the CoSi{sub 2}(001) ({radical}2 {times} {radical}2)R45 reconstructed surface, under the same growth conditions. The growth of Si on thin layers of CoSi{sub 2} (2nm-6nm) with ({radical}2 {times} {radical}2)R45 reconstructed surface at 160{degrees}C results in high crystalline quality for the Si top layer, as indicated by good channeling minimum yeild ({chi}{sub min} < 6%), but cross-sectional TEM shows that the CoSi{sub 2} layers are discontinuous. We also report preliminary results on Si grown on a 2 {times} 2 reconstructed CoSi{sub 2}(001) surface. 81 refs., 5 figs.

• Research Organization: Los Alamos National Lab., NM (USA)
• Sponsoring Organization: DOE; NSF; USDOE, Washington, DC (USA); National Science Foundation, Washington, DC (USA)
• DOE Contract Number: W-7405-ENG-36
• OSTI ID: 5691245
• Report Number(s): LA-UR-91-1734; CONF-910406--12; ON: DE91013387; CNN: DMR-9009028
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation &amp; Manufacture
360602 -- Other Materials-- Structure &amp; Phase Studies
COBALT COMPOUNDS
COBALT SILICIDES
COHERENT SCATTERING
DEPOSITION
DIFFRACTION
DIMENSIONS
ELECTRON DIFFRACTION
ELECTRON MICROSCOPY
ELEMENTS
EPITAXY
MICROSCOPY
MOLECULAR BEAM EPITAXY
SCATTERING
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS
THICKNESS
TRANSITION ELEMENT COMPOUNDS
TRANSMISSION ELECTRON MICROSCOPY