Photoresist integrity during high energy implant
- Texas Instruments Productization, Dallas, TX (United States)
- Eaton Corporation, Beverly, MA (United States)
- Texas Indstruments Semiconductor Process and Development Center, Dallas, TX (United States)
Photoresist integrity was evaluated on a commercial high-energy ion implanter operated up to the specified energy (1.7 MeV B or 3.0 MeV P) and power (1.0 MeV B at 1000 p{mu}A or 2.0 MeV P at 500 p{mu}A) limits. SEM Cross-sectional analysis of several photoresists showed that the proper cooling was maintained to avoid significant photoresist degradation. Photoresist shrinkage was observed, resulting in thickness reductions up to 22% and significant changes in sidewall slope. Little asymmetry was observed when photoresist was implanted at a 7{degrees} tilt. At the specified power limits, photoresist outgassing prevented smooth implant operation unless pressure compensation was implemented.
- OSTI ID:
- 621270
- Report Number(s):
- CONF-9606110--
- Country of Publication:
- United States
- Language:
- English
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