Dose Control System in the Optima XE Single Wafer High Energy Ion Implanter
- Axcelis Technologies, Inc, 108 Cherry Hill Drive, Beverly, MA 01915 (United States)
Photoresist outgassing can significantly compromise accurate dosimetry of high energy implants. High energy implant even at a modest beam current produces high beam powers which create significantly worse outgassing than low and medium energy implants and the outgassing continues throughout the implant due to the low dose in typical high energy implant recipes. In the previous generation of high energy implanters, dose correction by monitoring of process chamber pressure during photoresist outgassing has been used. However, as applications diversify and requirements change, the need arises for a more versatile photoresist correction system to match the versatility of a single wafer high energy ion implanter. We have successfully developed a new dosimetry system for the Optima XE single wafer high energy ion implanter which does not require any form of compensation due to the implant conditions. This paper describes the principles and performance of this new dose system.
- OSTI ID:
- 21510117
- Journal Information:
- AIP Conference Proceedings, Vol. 1321, Issue 1; Conference: IIT 2010: 18. international conference on ion implantation technology, Kyoto (Japan), 6-11 Jun 2010; Other Information: DOI: 10.1063/1.3548427; (c) 2010 American Institute of Physics; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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