Dopant profile changes induced by laser irradiation of silicon: comparison of theory and experiment
Conference
·
· AIP (Am. Inst. Phys.) Conf. Proc.; (United States)
OSTI ID:6196396
Dopan profile changes induced by pulsed-laser annealing of B, P, As, Fe, and Cu implanted silicon have been measured by secondary ion mass spectrometry and Rutherford ion backscattering and have been analyzed with thermal and mass diffusion calculations. The results show that these profile changes are consistent with near-surface melting and liquid-phase recrystallization. Fitted valus of diffusion coefficients for B, P, and As in liquid silicon agree quite well with those reported in the literature. Segregation of Fe and Cu to the surface during laser annealing has also been explained with a model calculation.
- Research Organization:
- Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
- OSTI ID:
- 6196396
- Report Number(s):
- CONF-781121-
- Journal Information:
- AIP (Am. Inst. Phys.) Conf. Proc.; (United States), Journal Name: AIP (Am. Inst. Phys.) Conf. Proc.; (United States) Vol. 50:1; ISSN APCPC
- Country of Publication:
- United States
- Language:
- English
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