Technique for increasing gate-drain breakdown voltage of ion-implanted JFET

Patent · Tue Jul 28 04:00:00 EDT 1987

OSTI ID:6196062

Schrantz, G A

A semiconductor device is described comprising: a semiconductor substrate of a first conductivity type; a first semiconductor region of a second conductivity type; opposite the first conductivity type, formed in a first surface portion of the substrate; a second semiconductor region of the second conductivity type, formed in a second surface portion of the substrate, spaced apart from the first surface portion by a third surface portion; and a third semiconductor region of the conductivity type formed in the third surface portion of the substrate and being contiguous with the first and second regions so as to define therewith respective first and second PN junctions. A first portion of the third semiconductor region is spaced apart from the first and second PN junctions by a second portion of the third semiconductor region contiguous with and extending a separation distance away from the first and second PN junctions to the first portion of the third semiconductor region. The first portion of the third semiconductor region has a first impurity concentration, and wherein the second proton of the third semiconductor region has a second impurity concentration less than the first impurity concentration and the profile of which second impurity concentration of the second portion of the third surface portion of the substrate in which the third semiconductor region is formed is effectively constant across the separation distance between the first and second PN junctions and the first portion of the third semiconductor region; and a fourth semiconductor region of the second conductivity type is disposed in the substrate beneath the third surface portion to be contiguous with each of the first, second and third semiconductor regions and defining a third PN junction with the third semiconductor region.

• Assignee: Harris Corp., Melbourne, FL
• Patent Number(s): US 4683485
• OSTI ID: 6196062
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
BREAKDOWN
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
ELECTRONIC CIRCUITS
FABRICATION
FIELD EFFECT TRANSISTORS
GATING CIRCUITS
IMPURITIES
ION IMPLANTATION
JUNCTIONS
MATERIALS
P-N JUNCTIONS
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SPACE DEPENDENCE
SUBSTRATES
TRANSISTORS