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Epitaxial YBa sub 2 Cu sub 3 O sub 7 minus y thin-film growth on NdGaO sub 3 substrate by laser ablation

Journal Article · · Journal of Applied Physics; (USA)
DOI:https://doi.org/10.1063/1.348520· OSTI ID:6194170
; ;  [1];  [2]
  1. NTT LSI Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan (JP)
  2. NTT Applied Electronics Laboratories, Tokai, Ibaraki 319-11, Japan (JP)
As-grown superconducting YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital y}} thin films with various thicknesses were successfully grown on lattice-matched NdGaO{sub 3} substrates by ArF laser ablation deposition. An as-grown 2000-A-thick film has a zero-resistance temperature ({ital T}{sub {ital c}}) at 90 K and a 170-A-thick film has a {ital T}{sub {ital c}} at 88 K. The existence of a thin interfacial diffusion layer between a 170-A-thick film and the substrate was observed by Auger electron spectroscopy. Rutherford backscattering spectroscopy suggest that as-grown YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital y}} films on NdGaO{sub 3} substrates are high-quality crystals. It is demonstrated that the NdGaO{sub 3} has considerable potential as an electronic substrate material by less interfacial diffusion layer and good crystallinity of grown thin films.
OSTI ID:
6194170
Journal Information:
Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 69:5; ISSN 0021-8979; ISSN JAPIA
Country of Publication:
United States
Language:
English