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Stress induced anisotropy in amorphous Gd-Fe and Tb-Fe sputtered films

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.327223· OSTI ID:6189638
The perpendicular anisotropy caused by the internal planar stress due to the substrate constraint in Gd-Fe and Tb-Fe sputtered films was investigated. The internal planar stress sigma in these films is found to be very sensitive to preparation conditions, especially to the argon pressure during sputtering, P/sub Ar/. Stress is compressive for low P/sub Ar/ and tensile for high P/sub Ar/. The contribution of the stress to the total perpendicular anisotropy varies depending on P/sub Ar/. Measurement of the anisotropy change before and after the removal of the substrate reveals that the predominant part of the perpendicular anisotropy originates from the internal stress due to the substrate constraint for Tb-Fe films with a composition of around 30 at.%Tb, where the magnetostriction is extraordinarily large.
Research Organization:
Faculty of Engineering, Nagoya University, Nagoya, Japan 464
OSTI ID:
6189638
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 50:B3; ISSN JAPIA
Country of Publication:
United States
Language:
English

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