Electronic transport in hydrogenated amorphous silicon films
This report presents results of an investigation into parameters characterizing electronic transport in glow-discharge-deposited a-Si:H, a-Si:CH, and a-Si:Sn:H films. Five experimental techniques were employed: photocurrent reversal, time-of-flight, charge collection, junction recovery, and surface photovoltage experiments. In photocurrent reversal, the dispute concerning the magnitude of the drift mobilities in a-Si:H was addressed. In the time-of-flight and charge collection measurements, the drift mobilities, carrier ranges, capture cross-sections (for shallow and deep trapping), and distribution of bandtail states were determined. The origin of the deep trapping states and their role in the Staebler-Wronski effect are discussed. A detailed description of the junction recovery experiment applied to Si:H p-i-n type diodes is given. On the basis of the transport parameters derived, a possible distribution of the energy levels for dangling bond states in a-Si:H is discussed.
- Research Organization:
- Tulane Univ., New Orleans, LA (USA)
- DOE Contract Number:
- AC02-83CH10093
- OSTI ID:
- 6185545
- Report Number(s):
- SERI/STR-211-2469; ON: DE85002901
- Resource Relation:
- Other Information: Paper copy only, copy does not permit microfiche production
- Country of Publication:
- United States
- Language:
- English
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AMORPHOUS STATE
CHARGE COLLECTION
PHOTOCURRENTS
TIME-OF-FLIGHT METHOD
CURRENTS
ELECTRIC CURRENTS
ELEMENTS
LIFETIME
MOBILITY
SEMIMETALS
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