Electronic transport in hydrogenated amorphous silicon films

Technical Report · Mon Oct 01 04:00:00 EDT 1984

OSTI ID:6185545

Koenenkamp, R

This report presents results of an investigation into parameters characterizing electronic transport in glow-discharge-deposited a-Si:H, a-Si:CH, and a-Si:Sn:H films. Five experimental techniques were employed: photocurrent reversal, time-of-flight, charge collection, junction recovery, and surface photovoltage experiments. In photocurrent reversal, the dispute concerning the magnitude of the drift mobilities in a-Si:H was addressed. In the time-of-flight and charge collection measurements, the drift mobilities, carrier ranges, capture cross-sections (for shallow and deep trapping), and distribution of bandtail states were determined. The origin of the deep trapping states and their role in the Staebler-Wronski effect are discussed. A detailed description of the junction recovery experiment applied to Si:H p-i-n type diodes is given. On the basis of the transport parameters derived, a possible distribution of the energy levels for dangling bond states in a-Si:H is discussed.

• Research Organization: Tulane Univ., New Orleans, LA (USA)
• DOE Contract Number: AC02-83CH10093
• OSTI ID: 6185545
• Report Number(s): SERI/STR-211-2469; ON: DE85002901
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360603 -- Materials-- Properties
AMORPHOUS STATE
CARRIER LIFETIME
CARRIER MOBILITY
CHARGE COLLECTION
CURRENTS
ELECTRIC CURRENTS
ELEMENTS
LIFETIME
MOBILITY
PHOTOCURRENTS
SEMIMETALS
SILICON
TIME-OF-FLIGHT METHOD
TRAPS