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Reactive magnetron sputtered zirconium oxide and zirconium silicon oxide thin films

Journal Article · · J. Vac. Sci. Technol., A; (United States)
DOI:https://doi.org/10.1116/1.576263· OSTI ID:6183131
Thin films of ZrO/sub 2/ and ZrO/sub 2/--SiO/sub 2/ were deposited by reactive dc magnetron sputtering. The optical properties, density, microstructure, and crystalline phase of pure ZrO/sub 2/ films were found to be a function of deposition rate. In particular, the index of refraction could be varied from 1.77 to 2.13 by increasing the deposition rate from 11 to 720 A/min. The density of the films increased from 3.9 to 5.8 g/cm/sup 3/ over the same deposition rate range. Small amounts of SiO/sub 2/ (10 at. %) stabilized the mixed films in an amorphous phase. A linear relationship between index of refraction and SiO/sub 2/ content was observed and, as in the case of pure ZrO/sub 2/, increasing deposition rate resulted in mixed films with higher densities and indices for a fixed SiO/sub 2/ content. The structure and optical properties of the mixed films remained unchanged with thermal cycling up to 500 /sup 0/C.
Research Organization:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598
OSTI ID:
6183131
Journal Information:
J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 7:3; ISSN JVTAD
Country of Publication:
United States
Language:
English