Low-current-threshold strip-buried-heterostructure lasers with self-aligned current injection stripes

Journal Article · Tue May 15 04:00:00 EDT 1979 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.90623· OSTI ID:6182745

Tsang, W T; Logan, R A; van der Ziel, J P

A modified strip-buried-heterostructure (SBH) laser is described where the LPE growth process self-aligns the current-confining stripes with the active GaAs strips. With these lasers current thresholds have been reduced from approx.180 mA in previous SBH laser to approx.70 mA for active GaAs strips of 380 x 10 x 0.2 ..mu..m. Excellent linearity in light-current characteristics and symmetry in laser output from both mirrors were obtained under both pulsed and cw operations. cw operation has been achieved at heat-sink temperature as high as 115 /sup 0/C. The current thresholds I/sub th/ have an exponential variation with temperature of the form I/sub th/proportionalexp(T/T/sub 0/) where T/sub 0/ was 110 /sup 0/K. Relaxation oscillation and self-pulsation was not observed for lasers with clean transverse modes in pulsed response up to current injection levels as high as 4I/sub th/.

• Research Organization: Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 6182745
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 34:10; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALIGNMENT
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH
CURRENTS
ELECTRIC CURRENTS
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
MEDIUM TEMPERATURE
MIRRORS
OSCILLATION MODES
OSCILLATIONS
PNICTIDES
PULSES
RELAXATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SYMMETRY
TEMPERATURE DEPENDENCE