Monolithically integrated external feedback InGaAsP lasers using stop-cleaving technique
Journal Article
·
· J. Appl. Phys.; (United States)
We have developed a monolithically integrated external feedback laser utilizing a pair of stop-cleaved double channel planar buried heterostructure lasers emitting at 1.3 ..mu..m. The external feedback is provided by the stop cleaved facet of the second cavity. A sidemode rejection ratio of 200 : 1 has been obtained with a laser having a 250-..mu..m cavity length and an external resonator length of 200 ..mu..m. Since both lasers are fabricated in a self-aligned structure, this device may prove to be a powerful scheme for injection locking to reduce dynamic linewidth.
- Research Organization:
- ATandT Bell Laboratories, Murray Hill, New Jersey 07974
- OSTI ID:
- 6176350
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 59:4; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALIGNMENT
ARSENIC COMPOUNDS
ARSENIDES
DESIGN
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTIONS
LASER CAVITIES
LASERS
LINE WIDTHS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
420300* -- Engineering-- Lasers-- (-1989)
ALIGNMENT
ARSENIC COMPOUNDS
ARSENIDES
DESIGN
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTIONS
LASER CAVITIES
LASERS
LINE WIDTHS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS